2SC1623 NPN SILICON EPITAXIAL TRANSISTOR

General Description

NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

Features

• High DC Current Gain:
  hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA)
• High Voltage: VCEO = 50 V

ABSOLUTE MAXIMUM RATINGS

• Maximum Voltages and Current (TA = 25°C)
  • Collector to Base Voltage VCBO 60 V
  • Collector to Emitter Voltage VCEO 50 V
  • Emitter to Base Voltage VEBO 5.0 V
  • Collector Current (DC) IC 100 mA
• Maximum Power Dissipation
  • Total Power Dissipation
  • at 25°C Ambient Temperature PT 200 mW
• Maximum Temperatures
  • Junction Temperature Tj 150 °C
  • Storage Temperature Range Tstg -55 to +150 °C