K4S561632E 4M x 16Bit x 4 Banks SDRAM

General Description

The K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Features

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
  • CAS latency (2 & 3)
  • Burst length (1, 2, 4, 8 & Full page)
  • Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (8K Cycle)
• 54pin TSOP II & 54pin sTSOP Pb, Pb-free Package (RoHS compliant)
  

Uses

• BROADCAST/HDTV EQUIPMENT
• TELECOMMUNICATIONS EQUIPMENT
• HIGH-SPEED DATA ACQUISITION
• CAD MONITORS/CCD IMAGE PROCESSING
• NANO SECOND PULSE INTEGRATOR/PEAK DETECTORS
• PULSE CODE MODULATOR/DEMODULATOR
• COMPLETE VIDEO DC LEVEL RESTORATION
• SAMPLE/HOLD AMPLIFIER